Effective Optimization Strategy for Electron Beam Lithography of Molecular Glass Negative Photoresist

Patterned negative electron affinity photocathodes for maskless electron beam lithography

This work focuses on two issues crucial to achieving high throughput with a negative electron affinity semiconductor photocathode source. Monte Carlo simulations indicate that for a 50 kV system, as much as 8 mA of current may be delivered to the wafer to achieve a raw throughput of 20 8 in. wafers per hour with 0.1 mm minimum feature size ~assuming a resist sensitivity of 10 mC/cm!. In order t...

Polystyrene negative resist for high-resolution electron beam lithography

We studied the exposure behavior of low molecular weight polystyrene as a negative tone electron beam lithography (EBL) resist, with the goal of finding the ultimate achievable resolution. It demonstrated fairly well-defined patterning of a 20-nm period line array and a 15-nm period dot array, which are the densest patterns ever achieved using organic EBL resists. Such dense patterns can be ach...

Electron Beam Lithography for Applications in Nanotechnology

Nanotechnology, apart from being a catch phrase for media and funding, has a serious role for the development of future products in the field of information technology. Specifically, future generations of memory and logic chips depend strongly on the ability of nanolithography. In addition to the promising field of nanoelectronics, optoelectronics as well as photonic devices benefit from the po...

Dopant Driven Electron Beam Lithography

Introduction to Electron Beam Lithography

Electron Beam Lithography is a specialized technique for creating extremely fine patterns (~ 50 nm). Derived from the early scanning electron microscopes, the technique in brief consists of scanning a beam of electrons across a surface covered with a resist film sensitive to those electrons, thus depositing energy in the desired pattern in the resist film. The main attributes of the technology ...